IEEE - Institute of Electrical and Electronics Engineers, Inc. - Characterization of structure and growth evolution for nc-Si:H in the tandem photovoltaic device configuration

2015 IEEE 42nd Photovoltaic Specialists Conference (PVSC)

Author(s): Zhiquan Huang ; Lila R. Dahal ; Maxwell M. Junda ; Puruswottam Aryal ; Sylvain Marsillac ; Robert W. Collins ; Nikolas J. Podraza
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 June 2015
Conference Location: New Orleans, LA, USA
Conference Date: 14 June 2015
Page(s): 1 - 4
ISBN (Electronic): 978-1-4799-7944-8
ISBN (DVD): 978-1-4799-7943-1
DOI: 10.1109/PVSC.2015.7356214
Regular:

Spectroscopic ellipsometry (SE) is used to study growth evolution of bottom cell p-type doped and intrinsic hydrogenated silicon (Si:H) layers in p-i-n amorphous/nanocrystalline... View More

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