IEEE - Institute of Electrical and Electronics Engineers, Inc. - Stability of hydrogen passivated UMG silicon with implied open circuit voltages over 700mV

2015 IEEE 42nd Photovoltaic Specialists Conference (PVSC)

Author(s): Sisi Wang ; Alison Wenham ; Phillip Hamer ; Brett Hallam ; Ly Mai ; Catherine Chan ; Nitin Nampalli ; Lihui Song ; Chee Mun Chong ; Malcolm Abbott ; Stuart Wenham
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 June 2015
Conference Location: New Orleans, LA, USA
Conference Date: 14 June 2015
Page(s): 1 - 4
ISBN (Electronic): 978-1-4799-7944-8
ISBN (DVD): 978-1-4799-7943-1
DOI: 10.1109/PVSC.2015.7355739
Regular:

Interstitial hydrogen is used to passivate defects in upgraded metallurgical grade (UMG) Czockralski silicon. It is observed that the quality of the UMG material can be improved progressively,... View More

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