IEEE - Institute of Electrical and Electronics Engineers, Inc. - Implications of accelerated B-O complex formation for mitigating LID in Czochralski silicon

2015 IEEE 42nd Photovoltaic Specialists Conference (PVSC)

Author(s): Brett J. Hallam ; Malcolm D. Abbott ; Nitin Nampalli ; Phill G. Hamer ; Stuart R. Wenham
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 June 2015
Conference Location: New Orleans, LA, USA
Conference Date: 14 June 2015
Page(s): 1 - 3
ISBN (Electronic): 978-1-4799-7944-8
ISBN (DVD): 978-1-4799-7943-1
DOI: 10.1109/PVSC.2015.7355689
Regular:

A three-state model is used to explore the influence of the accelerated formation of recombination-active defect complexes on the mitigation of light-induced degradation in p-type... View More

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