IEEE - Institute of Electrical and Electronics Engineers, Inc. - Microwave operation of submicrometer channel-length Silicon MOSFET's

Author(s): D.C. Shaver
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1985
Volume: 6
Page(s): 36 - 39
ISSN (Paper): 0741-3106
ISSN (Online): 1558-0563
DOI: 10.1109/EDL.1985.26034
Regular:

Aluminum-gate silicon n-channel MOSFET's with channel lengths down to 0.5 µm have been fabricated. A simple four-mask process based on contact optical lithography was used. Partial self-alignment... View More

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