IEEE - Institute of Electrical and Electronics Engineers, Inc. - High-voltage monolithic 3D capacitors based on through-silicon-via technology

2015 IEEE International Interconnect Technology Conference and 2015 IEEE Materials for Advanced Metallization Conference (IITC/MAM)

Author(s): Saeideh Gruenler ; Gudrun Rattmann ; Tobias Erlbacher ; Anton J. Bauer ; Lothar Frey
Sponsor(s): IEEE Electron Dev. Soc.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 May 2015
Conference Location: Grenoble, France
Conference Date: 18 May 2015
Page(s): 253 - 256
ISBN (Electronic): 978-1-4673-7356-2
ISBN (USB): 978-1-4673-7355-5
DOI: 10.1109/IITC-MAM.2015.7325655
Regular:

High-voltage monolithic 3D capacitors operating at breakdown voltages up to 200 V are fabricated based on through silicon-via technology. Electric characteristics of monolithic 3D capacitors... View More

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