IEEE - Institute of Electrical and Electronics Engineers, Inc. - Thin amorphous silicon oxide ICPECVD layer on gold surface for surface plasmon resonance measurements

2015 IEEE International Interconnect Technology Conference and 2015 IEEE Materials for Advanced Metallization Conference (IITC/MAM)

Author(s): Etienne Herth ; Rabah Zeggari ; Jean-Yves Rauch ; Fabien Remy-Martin ; Wilfrid Boireau
Sponsor(s): IEEE Electron Dev. Soc.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 May 2015
Conference Location: Grenoble, France
Conference Date: 18 May 2015
Page(s): 83 - 86
ISBN (Electronic): 978-1-4673-7356-2
ISBN (USB): 978-1-4673-7355-5
DOI: 10.1109/IITC-MAM.2015.7325632
Regular:

The present study demonstrates that thin layers of amorphous silicon oxide (SiOx) grown by inductively-coupled plasma enhanced chemical vapor deposition (ICPECVD) technology at lower temperatures... View More

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