IEEE - Institute of Electrical and Electronics Engineers, Inc. - Resistive switching in oxides for nonvolatile memories and neuromorphic computing

2015 IEEE International Interconnect Technology Conference and 2015 IEEE Materials for Advanced Metallization Conference (IITC/MAM)

Author(s): Sabina Spiga
Sponsor(s): IEEE Electron Dev. Soc.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 May 2015
Conference Location: Grenoble, France
Conference Date: 18 May 2015
Page(s): 213 - 214
ISBN (Electronic): 978-1-4673-7356-2
ISBN (USB): 978-1-4673-7355-5
DOI: 10.1109/IITC-MAM.2015.7325622
Regular:

Summary form only given. Resistive switching (RS) phenomena in oxides have received a large interest for ultra-scaled and high-density non-volatile memories, and many prototypes have been proposed... View More

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