IEEE - Institute of Electrical and Electronics Engineers, Inc. - Wafer level metallic bonding: Voiding mechanisms in copper layers

2015 IEEE International Interconnect Technology Conference and 2015 IEEE Materials for Advanced Metallization Conference (IITC/MAM)

Author(s): B. Imbert ; P. Gondcharton ; L. Benaissa ; F. Fournel ; M. Verdier
Sponsor(s): IEEE Electron Dev. Soc.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 May 2015
Conference Location: Grenoble, France
Conference Date: 18 May 2015
Page(s): 201 - 204
ISBN (Electronic): 978-1-4673-7356-2
ISBN (USB): 978-1-4673-7355-5
DOI: 10.1109/IITC-MAM.2015.7325619
Regular:

Promoted by the component miniaturization trend, three-dimensional integration appears as a promising option for implementation of the next generation of integrated circuits. In this context,... View More

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