IEEE - Institute of Electrical and Electronics Engineers, Inc. - Re-think stress migration phenomenon with stress measurement in 12 years

2015 IEEE International Interconnect Technology Conference and 2015 IEEE Materials for Advanced Metallization Conference (IITC/MAM)

Author(s): Hideya Matsuyama ; Takashi Suzuki ; Tomoji Nakamura ; Motoki Shiozu ; Hideo Ehara
Sponsor(s): IEEE Electron Dev. Soc.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 May 2015
Conference Location: Grenoble, France
Conference Date: 18 May 2015
Page(s): 307 - 310
ISBN (Electronic): 978-1-4673-7356-2
ISBN (USB): 978-1-4673-7355-5
DOI: 10.1109/IITC-MAM.2015.7325588
Regular:

We measured Internal residual stress change in the copper interconnect in 12 years to confirm the phenomenon that is occurred in acceleration test are equivalent with that is occurred in use... View More

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