IEEE - Institute of Electrical and Electronics Engineers, Inc. - A Trapping Mechanism for Autodoping in Silicon Epitaxy - II. Parameter Extraction and Simulations

Author(s): Man Wong ; R. Reif ; G.R. Srinivasan
Sponsor(s): IEEE Solid-State Circuits Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 February 1985
Volume: 20
Page(s): 9 - 14
ISSN (Paper): 0018-9200
ISSN (Online): 1558-173X
DOI: 10.1109/JSSC.1985.1052271
Regular:

In the previous paper [1], an improved dopant incorporation model was presented. Three parameters were found to define the model. In the present paper, the experimental procedure for determining... View More

Advertisement