IEEE - Institute of Electrical and Electronics Engineers, Inc. - Drain current noise in GaN MOSFETs at THz generation conditions

2015 International Conference on Noise and Fluctuations (ICNF)

Author(s): V. Gruzinskis ; P. Shiktorov ; E. Starikov ; H. Marinchio ; C. Palermo ; L. Varani
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 June 2015
Conference Location: Xian, China
Conference Date: 2 June 2015
Page(s): 1 - 4
ISBN (Electronic): 978-1-4673-8335-6
ISBN (USB): 978-1-4673-8334-9
DOI: 10.1109/ICNF.2015.7288624
Regular:

Electron transport and drain current noise in wurtzite GaN MOSFETs have been studied by Monte Carlo particle simulations which simultaneously solve the Boltzmann transport and pseudo-2D Poisson... View More

Advertisement