IEEE - Institute of Electrical and Electronics Engineers, Inc. - 1/f Noise model for PNP bipolar junction transistors based on radiation effect

2015 International Conference on Noise and Fluctuations (ICNF)

Author(s): Qifeng Zhao ; Yiqi Zhuang ; Junlin Bao ; Wei Hu
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 June 2015
Conference Location: Xian, China
Conference Date: 2 June 2015
Page(s): 1 - 4
ISBN (Electronic): 978-1-4673-8335-6
ISBN (USB): 978-1-4673-8334-9
DOI: 10.1109/ICNF.2015.7288618
Regular:

It is found that ionizing-radiation can lead to 1/f noise degradations in PNP bipolar junction transistors. In this paper, it is suggested that the surface of the space charge region is the main... View More

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