IEEE - Institute of Electrical and Electronics Engineers, Inc. - Schottky gate of AlGaN/GaN HEMTs: Investigation with DC and low frequency noise measurements after 7000 hours HTOL test

2015 International Conference on Noise and Fluctuations (ICNF)

Author(s): M. Rzin ; A. Curutchet ; N. Labat ; N. Malbert ; L. Brunel ; B. Lambert
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 June 2015
Conference Location: Xian, China
Conference Date: 2 June 2015
Page(s): 1 - 4
ISBN (Electronic): 978-1-4673-8335-6
ISBN (USB): 978-1-4673-8334-9
DOI: 10.1109/ICNF.2015.7288607
Regular:

This paper reports on AlGaN/GaN high electron mobility transistors (HEMTs) that have been aged by high temperature operating life test (HTOL) during 7000 hours. DC characterization of some aged... View More

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