IEEE - Institute of Electrical and Electronics Engineers, Inc. - Low frequency noise spectroscopy in rotated UTBOX nMOSFETs

2015 International Conference on Noise and Fluctuations (ICNF)

Author(s): B. Cretu ; E. Simoen ; J-M Routoure ; R. Carin ; M. Aoulaiche ; C. Claeys
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 June 2015
Conference Location: Xian, China
Conference Date: 2 June 2015
Page(s): 1 - 4
ISBN (Electronic): 978-1-4673-8335-6
ISBN (USB): 978-1-4673-8334-9
DOI: 10.1109/ICNF.2015.7288588
Regular:

The low frequency noise measurements as a function of temperature are used as a non-destructive device characterization tool in order to evaluate the quality of the silicon film and to identify... View More

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