IEEE - Institute of Electrical and Electronics Engineers, Inc. - InAlN/GaN HEMT technology for robust HF receivers: An overview of the HF and LF noise performances

2015 International Conference on Noise and Fluctuations (ICNF)

Author(s): S. D. Nsele ; J. G. Tartarin ; L. Escotte ; S. Piotrowicz ; S. Delage
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 June 2015
Conference Location: Xian, China
Conference Date: 2 June 2015
Page(s): 1 - 4
ISBN (Electronic): 978-1-4673-8335-6
ISBN (USB): 978-1-4673-8334-9
DOI: 10.1109/ICNF.2015.7288538
Regular:

From the first developments of Nitride technologies using AlGaN/GaN heterostructures for designing high power, high frequency HEMT devices, we now assist to the emergence of new declination with... View More

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