IEEE - Institute of Electrical and Electronics Engineers, Inc. - InAlN/GaN HEMT technology for robust HF receivers: An overview of the HF and LF noise performances
2015 International Conference on Noise and Fluctuations (ICNF)
Author(s): | S. D. Nsele ; J. G. Tartarin ; L. Escotte ; S. Piotrowicz ; S. Delage |
Publisher: | IEEE - Institute of Electrical and Electronics Engineers, Inc. |
Publication Date: | 1 June 2015 |
Conference Location: | Xian, China |
Conference Date: | 2 June 2015 |
Page(s): | 1 - 4 |
ISBN (Electronic): | 978-1-4673-8335-6 |
ISBN (USB): | 978-1-4673-8334-9 |
DOI: | 10.1109/ICNF.2015.7288538 |
Regular:
From the first developments of Nitride technologies using AlGaN/GaN heterostructures for designing high power, high frequency HEMT devices, we now assist to the emergence of new declination with... View More