IEEE - Institute of Electrical and Electronics Engineers, Inc. - A novel MOS radiation dosimeter based on the MEMS-made oxide layer

2015 Transducers - 18th International Conference on Solid-State Sensors, Actuators and Microsystems (TRANSDUCERS)

Author(s): H. Liu ; Y. Yang ; J. Zhang
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 June 2015
Conference Location: Anchorage, AK, USA
Conference Date: 21 June 2015
Page(s): 1,156 - 1,159
ISBN (Electronic): 978-1-4799-8955-3
ISSN (Electronic): 2164-1641
DOI: 10.1109/TRANSDUCERS.2015.7181133
Regular:

This paper reports a novel MOS dosimeter with a very thick and defect-rich oxide layer fabricated by MEMS technology. We combined deep-reactive-ion etching (DRIE), thermal oxidation and LPCVD to... View More

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