IEEE - Institute of Electrical and Electronics Engineers, Inc. - Effect of crystallinity-damage recovery on mechanical properties of Ga-implanted sub-100nm Si nanowires

2015 Transducers - 18th International Conference on Solid-State Sensors, Actuators and Microsystems (TRANSDUCERS)

Author(s): T. Fujii ; T. Kozeki ; S. Inoue ; T. Namazu
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 June 2015
Conference Location: Anchorage, AK, USA
Conference Date: 21 June 2015
Page(s): 900 - 903
ISBN (Electronic): 978-1-4799-8955-3
ISSN (Electronic): 2164-1641
DOI: 10.1109/TRANSDUCERS.2015.7181069
Regular:

In this paper, the effect of high-vacuum annealing with crystallinity-damage recovery on mechanical characteristics of Ga-implanted Si nanowires (NWs) fabricated by focused ion beam (FIB)... View More

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