IEEE - Institute of Electrical and Electronics Engineers, Inc. - Design and Fabrication of Low Voltage Silicon Trench MOS Barrier Schottky Rectifier for High Temperature Applications

2015 IEEE 11th International Conference on Power Electronics and Drive Systems (PEDS)

Author(s): Mohd Rofei Mat Hussin ; Muhamad Amri Ismail ; Sharaifah Kamariah Wan Sabli ; Nurafizah Saidin ; H. Y. Wong ; Mukter Zaman
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 June 2015
Conference Location: Sydney, NSW, Australia
Conference Date: 9 June 2015
Page(s): 437 - 441
ISBN (Electronic): 978-1-4799-4402-6
ISSN (Electronic): 2164-5264
DOI: 10.1109/PEDS.2015.7203419
Regular:

This paper presents the design, fabrication, and characterization of 60V and 100V silicon Trench MOS Barrier Schottky (TMBS) rectifier. The devices were designed for switching power supplies... View More

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