IEEE - Institute of Electrical and Electronics Engineers, Inc. - Analysis of stability and different speed boosting assist techniques towards the design and optimization of high speed SRAM cell

2015 19th International Symposium on VLSI Design and Test (VDAT)

Author(s): Rohan Sinha ; Pranay Samanta
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 June 2015
Conference Location: Ahmedabad, India
Conference Date: 26 June 2015
Page(s): 1 - 6
ISBN (CD): 978-1-4799-1742-6
ISBN (Electronic): 978-1-4799-1743-3
DOI: 10.1109/ISVDAT.2015.7208097
Regular:

Cell stability with efficient operation are the two major concerns towards the design of SRAM bit cells in sub nanometer CMOS technologies. Supply scaling, intra-die parameter variations are some... View More

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