IEEE - Institute of Electrical and Electronics Engineers, Inc. - Fabrication and characterization of Al gate n-MOSFET, on-chip fabricated with Si 3 N 4 ISFET

2015 19th International Symposium on VLSI Design and Test (VDAT)

Author(s): R. Chaudhary ; A. Sharma ; S. Sinha ; J. Yadav ; R. Sharma ; R. Mukhiya ; V. K. Khanna
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 June 2015
Conference Location: Ahmedabad, India
Conference Date: 26 June 2015
Page(s): 1 - 4
ISBN (CD): 978-1-4799-1742-6
ISBN (Electronic): 978-1-4799-1743-3
DOI: 10.1109/ISVDAT.2015.7208083
Regular:

This paper reports the fabrication of n-type MOSFET using Si3N4 as dielectric on the same wafer as ISFET for ISFET characterization. The paper presents the fabrication,... View More

Advertisement