IEEE - Institute of Electrical and Electronics Engineers, Inc. - The low voltage TFET demands higher perfection than previously required in electronics

2015 73rd Annual Device Research Conference (DRC)

Author(s): Sapan Agarwal ; Eli Yablonovitch
Sponsor(s): IEEE Electron Devices Soc.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 June 2015
Conference Location: Columbus, OH, USA
Conference Date: 21 June 2015
Page(s): 247 - 248
ISBN (Electronic): 978-1-4673-8135-2
ISBN (Paper): 978-1-4673-8134-5
DOI: 10.1109/DRC.2015.7175662
Regular:

Summary form only given. Tunneling Field Effect Transistors (TFETs) have the potential to achieve a low operating voltage by overcoming the thermally limited subthreshold swing of 60mV/decade, but... View More

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