IEEE - Institute of Electrical and Electronics Engineers, Inc. - P-i-n diodes enabled by homoepitaxially grown phosphorus doped diamond with breakdown electric field >1.25 MV/cm

2015 73rd Annual Device Research Conference (DRC)

Author(s): M. Dutta ; F. A. M. Koeck ; R. J. Nemanich ; S. Chowdhury
Sponsor(s): IEEE Electron Devices Soc.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 June 2015
Conference Location: Columbus, OH, USA
Conference Date: 21 June 2015
Page(s): 184
ISBN (Electronic): 978-1-4673-8135-2
ISBN (Paper): 978-1-4673-8134-5
DOI: 10.1109/DRC.2015.7175618
Regular:

Owing to its rich material properties, such as high critical electric field, superior thermal conductivity and high electron and hole mobility, diamond has the potential of becoming the material... View More

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