IEEE - Institute of Electrical and Electronics Engineers, Inc. - Out-of-plane strain effect on silicon-based flexible FinFETs

2015 73rd Annual Device Research Conference (DRC)

Author(s): Mohamed T. Ghoneim ; Nasir Alfaraj ; Galo A. Torres Sevilla ; Hossain M. Fahad ; Muhammad M. Hussain
Sponsor(s): IEEE Electron Devices Soc.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 June 2015
Conference Location: Columbus, OH, USA
Conference Date: 21 June 2015
Page(s): 95 - 96
ISBN (Electronic): 978-1-4673-8135-2
ISBN (Paper): 978-1-4673-8134-5
DOI: 10.1109/DRC.2015.7175572
Regular:

Summary form only given. We report out-of-plane strain effect on silicon based flexible FinFET, with sub 20 nm wide fins and hafnium silicate based high-κ gate dielectric. Since ultra-thin... View More

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