IEEE - Institute of Electrical and Electronics Engineers, Inc. - Charge-Sheet Model Fitting to Extract Radiation-Induced Oxide and Interface Charge

Author(s): K. F. Galloway ; C. L. Wilson ; L. C. Witte
Sponsor(s): IEEE Nuclear and Plasma Sciences Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 December 1985
Volume: 32
Page(s): 4,461 - 4,465
ISSN (Paper): 0018-9499
ISSN (Online): 1558-1578
DOI: 10.1109/TNS.1985.4334142
Regular:

A method for extracting values of oxide and interface charge from the current-voltage (I-V) characteristics of long-channel MOSFETs is described. The one-dimensional charge-sheet model developed... View More

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