IEEE - Institute of Electrical and Electronics Engineers, Inc. - Predictive and efficient modeling of hot-carrier degradation in nLDMOS devices

2015 IEEE 27th International Symposium on Power Semiconductor Devices & ICs (ISPSD)

Author(s): Prateek Sharma ; Stanislav Tyaginov ; Yannick Wimmer ; Florian Rudolf ; Karl Rupp ; Markus Bina ; Hubert Enichlmair ; Jong-Mun Park ; Hajdin Ceric ; Tibor Grasser
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 May 2015
Conference Location: Hong Kong, China
Conference Date: 10 May 2015
Page(s): 389 - 392
ISBN (Electronic): 978-1-4799-6261-7
ISBN (Paper): 978-1-4799-6259-4
ISSN (Paper): 1943-653X
DOI: 10.1109/ISPSD.2015.7123471
Regular:

We present a physical model for hot-carrier degradation (HCD) which is based on the information provided by the carrier energy distribution function. In the first version of our model the... View More

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