IEEE - Institute of Electrical and Electronics Engineers, Inc. - A modeling and experimental method for accurate thermal analysis of AlGaN/GaN powerbars

2015 IEEE 27th International Symposium on Power Semiconductor Devices & ICs (ISPSD)

Author(s): Vice Sodan ; Steve Stoffels ; Herman Oprins ; Martine Baelmans ; Stefaan Decoutere ; Ingrid De Wolf
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 May 2015
Conference Location: Hong Kong, China
Conference Date: 10 May 2015
Page(s): 377 - 380
ISBN (Electronic): 978-1-4799-6261-7
ISBN (Paper): 978-1-4799-6259-4
ISSN (Paper): 1943-653X
DOI: 10.1109/ISPSD.2015.7123468
Regular:

In this work we present a novel and comprehensive method for thermal characterization of GaN based transistors. By means of two coupled simulations (TCAD and FEM) a detailed insight into the... View More

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