IEEE - Institute of Electrical and Electronics Engineers, Inc. - Impact of the backside potential on the current collapse of GaN SBDs and HEMTs

2015 IEEE 27th International Symposium on Power Semiconductor Devices & ICs (ISPSD)

Author(s): J. A. Croon ; G. A. M. Hurkx ; J. J. T. M. Donkers ; J. Sonsky
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 May 2015
Conference Location: Hong Kong, China
Conference Date: 10 May 2015
Page(s): 365 - 368
ISBN (Electronic): 978-1-4799-6261-7
ISBN (Paper): 978-1-4799-6259-4
ISSN (Paper): 1943-653X
DOI: 10.1109/ISPSD.2015.7123465
Regular:

This paper shows both experimentally and in simulation that the amount of current collapse for GaN SBDs and HEMTs strongly depends on the node to which the backside is connected, i.e, how the... View More

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