IEEE - Institute of Electrical and Electronics Engineers, Inc. - Accelerated resistance degradation in aluminum by pulsed power cycling

2015 IEEE 27th International Symposium on Power Semiconductor Devices & ICs (ISPSD)

Author(s): A. Ferrara ; J. Claes ; M. Swanenberg ; L. van Dijk ; P. G. Steeneken
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 May 2015
Conference Location: Hong Kong, China
Conference Date: 10 May 2015
Page(s): 301 - 304
ISBN (Electronic): 978-1-4799-6261-7
ISBN (Paper): 978-1-4799-6259-4
ISSN (Paper): 1943-653X
DOI: 10.1109/ISPSD.2015.7123449
Regular:

This work investigates the resistance degradation of AlCu resistors in CMOS backend during pulsed power cycling at extreme temperatures. Significant resistance increases ΔR up to 29% are... View More

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