IEEE - Institute of Electrical and Electronics Engineers, Inc. - Development of power semiconductors by quantitative nanoscale dopant imaging

2015 IEEE 27th International Symposium on Power Semiconductor Devices & ICs (ISPSD)

Author(s): H. Bartolf ; U. Gysin ; H. R. Rossmann ; A. Bubendorf ; T. Glatzel ; T. A. Jung ; E. Meyer ; M. Zimmermann ; S. Reshanov ; A. Schoner
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 May 2015
Conference Location: Hong Kong, China
Conference Date: 10 May 2015
Page(s): 281 - 284
ISBN (Electronic): 978-1-4799-6261-7
ISBN (Paper): 978-1-4799-6259-4
ISSN (Paper): 1943-653X
DOI: 10.1109/ISPSD.2015.7123444
Regular:

Dopant imaging at high spatial resolution provides an indispensable tool for the improvement of novel power semiconductor devices. Cross-sections of next-generation devices based on Silicon (Si)... View More

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