IEEE - Institute of Electrical and Electronics Engineers, Inc. - 1700V/30A 4H-SiC MOSFET with low cut-in voltage embedded diode and room temperature boron implanted termination

2015 IEEE 27th International Symposium on Power Semiconductor Devices & ICs (ISPSD)

Author(s): Cheng-Tyng Yen ; Chien-Chung Hung ; Hsiang-Ting Hung ; Lurng-Shehng Lee ; Chwan-Ying Lee ; Tzu-Ming Yang ; Yao-Feng Huang ; Chi-Yin Cheng ; Pei-Ju Chuang
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 May 2015
Conference Location: Hong Kong, China
Conference Date: 10 May 2015
Page(s): 265 - 268
ISBN (Electronic): 978-1-4799-6261-7
ISBN (Paper): 978-1-4799-6259-4
ISSN (Paper): 1943-653X
DOI: 10.1109/ISPSD.2015.7123440
Regular:

In this paper, a SiC MOSFET embedded with a low cut-in voltage Schottky diode was proposed. The 1V cut-in voltage of embedded Schottky diode, which is lower than the 3V cut-in voltage of parasitic... View More

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