IEEE - Institute of Electrical and Electronics Engineers, Inc. - Series-connection of SiC normally-on JFETs

2015 IEEE 27th International Symposium on Power Semiconductor Devices & ICs (ISPSD)

Author(s): Xueqing Li ; Anup Bhalla ; Petre Alexandrov ; John Hostetler ; Leonid Fursin
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 May 2015
Conference Location: Hong Kong, China
Conference Date: 10 May 2015
Page(s): 221 - 224
ISBN (Electronic): 978-1-4799-6261-7
ISBN (Paper): 978-1-4799-6259-4
ISSN (Paper): 1943-653X
DOI: 10.1109/ISPSD.2015.7123429
Regular:

The SiC normally-on JFET is a new member in the family of power devices. It is reliable and robust under high-temperature and high-voltage harsh operatioing conditions due to its pn-junction gate... View More

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