IEEE - Institute of Electrical and Electronics Engineers, Inc. - 100 V class multiple stepped oxide field plate trench MOSFET (MSO-FP-MOSFET) aimed to ultimate structure realization

2015 IEEE 27th International Symposium on Power Semiconductor Devices & ICs (ISPSD)

Author(s): Kenya Kobayashi ; Toshifumi Nishiguchi ; Shunsuke Katoh ; Takahiro Kawano ; Yusuke Kawaguchi
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 May 2015
Conference Location: Hong Kong, China
Conference Date: 10 May 2015
Page(s): 141 - 144
ISBN (Electronic): 978-1-4799-6261-7
ISBN (Paper): 978-1-4799-6259-4
ISSN (Paper): 1943-653X
DOI: 10.1109/ISPSD.2015.7123409
Regular:

For low-voltage power MOSFETs technology, Field Plate (FP) and Superjunction (SJ) structures have been applied to reduce on-resistance drastically. As one of the approach for the ultimate... View More

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