IEEE - Institute of Electrical and Electronics Engineers, Inc. - Temperature dependence of single-event burnout for super junction MOSFET

2015 IEEE 27th International Symposium on Power Semiconductor Devices & ICs (ISPSD)

Author(s): Shunsuke Katoh ; Eiji Shimada ; Takayuki Yoshihira ; Akihiro Oyama ; Syotaro Ono ; Hideyuki Ura ; Gentaro Ookura ; Wataru Saito ; Yusuke Kawaguchi
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 May 2015
Conference Location: Hong Kong, China
Conference Date: 10 May 2015
Page(s): 93 - 96
ISBN (Electronic): 978-1-4799-6261-7
ISBN (Paper): 978-1-4799-6259-4
ISSN (Paper): 1943-653X
DOI: 10.1109/ISPSD.2015.7123397
Regular:

Single-Event Burnout (SEB) is one of the catastrophic failure effects that could cause destruction of a MOSFET. In the present work, we experimentally obtained the dependence of SEB tolerance of... View More

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