IEEE - Institute of Electrical and Electronics Engineers, Inc. - Investigation of HCI reliability in interdigitated LDMOS

2015 IEEE 27th International Symposium on Power Semiconductor Devices & ICs (ISPSD)

Author(s): Kyuheon Cho ; Seonghoon Ko ; Fumie Machida ; Jaeho Kim ; Jaejune Jang ; Uihui Kwon ; Keun-Ho Lee ; Youngkwan Park
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 May 2015
Conference Location: Hong Kong, China
Conference Date: 10 May 2015
Page(s): 69 - 72
ISBN (Electronic): 978-1-4799-6261-7
ISBN (Paper): 978-1-4799-6259-4
ISSN (Paper): 1943-653X
DOI: 10.1109/ISPSD.2015.7123391
Regular:

Novel time-dependent kinetic model for interface trap formation is developed resulting in consideration of hot electron/hole injection in Interdigitated LDMOS. Proposed kinetic model replaces Si-H... View More

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