IEEE - Institute of Electrical and Electronics Engineers, Inc. - Current-collapse-free operations up to 850 V by GaN-GIT utilizing hole injection from drain

2015 IEEE 27th International Symposium on Power Semiconductor Devices & ICs (ISPSD)

Author(s): Saichiro Kaneko ; Masayuki Kuroda ; Manabu Yanagihara ; Ayanori Ikoshi ; Hideyuki Okita ; Tatsuo Morita ; Kenichiro Tanaka ; Masahiro Hikita ; Yasuhiro Uemoto ; Satoru Takahashi ; Tetsuzo Ueda
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 May 2015
Conference Location: Hong Kong, China
Conference Date: 10 May 2015
Page(s): 41 - 44
ISBN (Electronic): 978-1-4799-6261-7
ISBN (Paper): 978-1-4799-6259-4
ISSN (Paper): 1943-653X
DOI: 10.1109/ISPSD.2015.7123384
Regular:

Current collapse at high drain voltage in a GaN-based transistor is successfully suppressed by the introduction of p-GaN region which is placed beside the drain of a Gate Injection Transistor... View More

Advertisement