IEEE - Institute of Electrical and Electronics Engineers, Inc. - Ultra low miller capacitance trench-gate IGBT with the split gate structure

2015 IEEE 27th International Symposium on Power Semiconductor Devices & ICs (ISPSD)

Author(s): K. Ohi ; Y. Ikura ; A. Yoshimoto ; K. Sugimura ; Y. Onozawa ; H. Takahashi ; M. Otsuki
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 May 2015
Conference Location: Hong Kong, China
Conference Date: 10 May 2015
Page(s): 25 - 28
ISBN (Electronic): 978-1-4799-6261-7
ISBN (Paper): 978-1-4799-6259-4
ISSN (Paper): 1943-653X
DOI: 10.1109/ISPSD.2015.7123380
Regular:

This paper presents a newly developed trench gate IGBT which utilizes the split gate structure. It can realize both low Miller capacitance and high Injection Enhancement (IE) effect. The Miller... View More

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