The Japan Institute of Electronics Packaging - Effect of ion species for the surface activated bonding of GaAs wafers on the characteristics of the bonded interfaces

2015 International Conference on Electronic Packaging and iMAPS All-Asia Conference (ICEP-IAAC)

Author(s): Genki Kono ; Masahisa Fujino ; Daiji Yamashita ; Kentaroh Watanabe ; Masakazu Sugiyama ; Yoshiaki Nakano ; Tadatomo Suga
Sponsor(s): Japan Inst. Electron. Packag.
Publisher: The Japan Institute of Electronics Packaging
Publication Date: 1 April 2015
Conference Location: Kyoto, Japan
Conference Date: 14 April 2015
Page(s): 478 - 481
ISBN (CD): 978-4-9040-9012-1
ISBN (Electronic): 978-4-9040-9013-8
DOI: 10.1109/ICEP-IAAC.2015.7111062
Regular:

Effect of ion species for fast atom beam (FAB) irradiation of surface activated bonding (SAB) of GaAs wafers was investigated by current-voltage (I-V) measurements and transmission electron... View More

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