IEEE - Institute of Electrical and Electronics Engineers, Inc. - Finger number and width variation effect of nano-scale strained NMOS device with and without protection diode

2008 IEEE Silicon Nanoelectronics Workshop (SNW 2008)

Author(s): Sung-Man Cho ; Gwang-Doo Jo ; Young-Kwang Kim ; Il-Hun Son ; Hyuck-In Kwon ; Jong-Ho Lee
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 June 2008
Conference Location: Honolulu, HI, USA
Conference Date: 15 June 2008
Page(s): 1 - 2
ISBN (Paper): 978-1-4244-2071-1
DOI: 10.1109/SNW.2008.5418488
Regular:

The enhancement of carrier mobility by strain is necessary to improve transistor performance with scaling down. Especially the technique of inducing strain by using a tensile or compressive... View More

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