IEEE - Institute of Electrical and Electronics Engineers, Inc. - Atomistic study of phonon states in hydrogen-terminated Si ultra-thin films

2008 IEEE Silicon Nanoelectronics Workshop (SNW 2008)

Author(s): S. Sawai ; S. Uno ; M. Okamoto ; Y. Tsuchiya ; S. Oda ; H. Mizuta
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 June 2008
Conference Location: Honolulu, HI, USA
Conference Date: 15 June 2008
Page(s): 1 - 2
ISBN (Paper): 978-1-4244-2071-1
DOI: 10.1109/SNW.2008.5418466
Regular:

Ab initio simulation of 'nanophonons' has been conducted for the first time for the H-terminated ultrathin Si films of 3 to 10 atomic layers in thickness and have revealed that the phonon bandgaps... View More

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