IEEE - Institute of Electrical and Electronics Engineers, Inc. - Transport through single dopants in gate-all-around silicon nanowire MOSFETs (SNWFETs)

2008 IEEE Silicon Nanoelectronics Workshop (SNW 2008)

Author(s): B.H. Hong ; Y.C. Jung ; S.W. Hwang ; K.H. Cho ; K.H. Yeo ; Y.Y. Yeoh ; S.D. Suk ; M. Li ; D.-W. Kim ; D. Park ; K.S. Oh ; W.-S. Lee
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 June 2008
Conference Location: Honolulu, HI, USA
Conference Date: 15 June 2008
Page(s): 1 - 2
ISBN (Paper): 978-1-4244-2071-1
DOI: 10.1109/SNW.2008.5418464
Regular:

Temperature (T) dependent transport measurements of cylindrical shaped gate-all-around silicon nanowire MOSFETs (SNWFETs) were performed. Single electron tunneling behaviors were observed at 4.2 K... View More

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