IEEE - Institute of Electrical and Electronics Engineers, Inc. - Study of low frequency noise behavior in silicon nanowire transistors fabricated with top-to-down approach

2008 IEEE Silicon Nanoelectronics Workshop (SNW 2008)

Author(s): Jing Zhuge ; Ru Huang ; Runsheng Wang ; Liangliang Zhang ; D.-W. Kim ; Donggun Park ; Yangyuan Wang
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 June 2008
Conference Location: Honolulu, HI, USA
Conference Date: 15 June 2008
Page(s): 1 - 2
ISBN (Paper): 978-1-4244-2071-1
DOI: 10.1109/SNW.2008.5418463
Regular:

LFN in nSNWTs realized with top-to-down process is studied and analyzed in this paper. Correlated-mobility fluctuation model can explain the LFN behavior at low drain current, while significant... View More

Advertisement