IEEE - Institute of Electrical and Electronics Engineers, Inc. - Experimental study on silicon nanowire nMOSFET and single-electron transistor at room temperature under uniaxial tensile strain

2008 IEEE Silicon Nanoelectronics Workshop (SNW 2008)

Author(s): YeonJoo Jeong ; K. Miyaji ; T. Hiramoto
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 June 2008
Conference Location: Honolulu, HI, USA
Conference Date: 15 June 2008
Page(s): 1 - 2
ISBN (Paper): 978-1-4244-2071-1
DOI: 10.1109/SNW.2008.5418461
Regular:

Uniaxial tensile strain effects on [110] directed silicon nanowire nMOSFETs (NWFETs) and single-electron transistors (SETs) were experimentally studied for the first time. It is found that strain... View More

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