IEEE - Institute of Electrical and Electronics Engineers, Inc. - Characterization of a single resonant charge in a silicon nanowire device

2008 IEEE Silicon Nanoelectronics Workshop (SNW 2008)

Author(s): M. Pierre ; X. Jehl ; M. Sanquer ; M. Vinet ; G. Molas ; S. Deleonibus
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 June 2008
Conference Location: Honolulu, HI, USA
Conference Date: 15 June 2008
Page(s): 1 - 2
ISBN (Paper): 978-1-4244-2071-1
DOI: 10.1109/SNW.2008.5418458
Regular:

We investigate the time-dependent transport properties of two very asymmetric coupled quantum dots: a single resonant charge and an electrometer made of a gated silicon nanowire in the Coulomb... View More

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