IEEE - Institute of Electrical and Electronics Engineers, Inc. - Si bicrystal single-electron FETs

2008 IEEE Silicon Nanoelectronics Workshop (SNW 2008)

Author(s): Y. Kasai ; T. Ishino ; D. Moraru ; R. Nuryadi ; H. Ikeda ; M. Tabe
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 June 2008
Conference Location: Honolulu, HI, USA
Conference Date: 15 June 2008
Page(s): 1 - 2
ISBN (Paper): 978-1-4244-2071-1
DOI: 10.1109/SNW.2008.5418426
Regular:

Si single-electron (or single-hole) tunneling PETs containing a network of screw dislocations, which is intentionally formed as a periodic potential source, has been studied focusing on effects of... View More

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