IEEE - Institute of Electrical and Electronics Engineers, Inc. - Fabrication and characterization of Nitride base photodiodes with nanostructure

2008 Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD'08)

Author(s): Tsair-Chun Liang ; Shang-Chao Hung
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 July 2008
Conference Location: Sydney, NSW, Australia
Conference Date: 28 July 2008
Page(s): 122 - 124
ISBN (CD): 978-1-4244-2717-8
ISBN (Paper): 978-1-4244-2716-1
ISSN (Paper): 1097-2137
DOI: 10.1109/COMMAD.2008.4802106
Regular:

In this study, we achieved nanoscale InGaN self-assembled quantum dots (SAQDs) in the well layers of the active region by using an interrupted growth method. And then nitride base photodiodes with... View More

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