IEEE - Institute of Electrical and Electronics Engineers, Inc. - HgCdTe MWIR PECVD SiN passivated photodiodes

2008 Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD'08)

Author(s): R.J. Westerhout ; C.A. Musca ; R. Sewell ; J. Antoszewski ; J.M. Dell ; L. Faraone
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 July 2008
Conference Location: Sydney, NSW, Australia
Conference Date: 28 July 2008
Page(s): 78 - 81
ISBN (CD): 978-1-4244-2717-8
ISBN (Paper): 978-1-4244-2716-1
ISSN (Paper): 1097-2137
DOI: 10.1109/COMMAD.2008.4802096
Regular:

To determine a suitable passivation and insulation layer for HgCdTe photodiodes, the properties of various low temperature plasma-enhanced chemical vapour deposition (PECVD) SiN films were... View More

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