IEEE - Institute of Electrical and Electronics Engineers, Inc. - Isotropic dry-etching of SiC for AlGaN/GaN MEMS fabrication

2008 Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD'08)

Author(s): F. Niebelschutz ; J. Pezoldt ; T. Stauden ; V. Cimalla ; K. Tonisch ; K. Bruckner ; M. Hein ; O. Ambacher ; A. Schober
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 July 2008
Conference Location: Sydney, NSW, Australia
Conference Date: 28 July 2008
Page(s): 26 - 29
ISBN (CD): 978-1-4244-2717-8
ISBN (Paper): 978-1-4244-2716-1
ISSN (Paper): 1097-2137
DOI: 10.1109/COMMAD.2008.4802084
Regular:

We present an isotropic fluorine based process to etch 4H-SiC substrates compatible with standard metallic etch masks and reasonable etching rates. Additionally, a new masking material has been... View More

Advertisement