IEEE - Institute of Electrical and Electronics Engineers, Inc. - Alternating current bias-assisted photoenhanced oxidation of n-GaN in dionized water

2008 Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD'08)

Author(s): T.H. Hsueh ; W.C. Lai ; C.Y. Yeh ; J.K. Sheu ; L.C. Peng ; K.H. Chang ; S.E. Wu ; C.P. Liu ; B. Gault ; S.P. Ringer
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 July 2008
Conference Location: Sydney, NSW, Australia
Conference Date: 28 July 2008
Page(s): 1 - 3
ISBN (CD): 978-1-4244-2717-8
ISBN (Paper): 978-1-4244-2716-1
ISSN (Paper): 1097-2137
DOI: 10.1109/COMMAD.2008.4802077
Regular:

Patterned oxidation of n-GaN in water at room temperature is achieved by using an imprint technique and an alternating current (ac) bias-assisted photoelectrochemical process. Mold is... View More

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