IEEE - Institute of Electrical and Electronics Engineers, Inc. - Evaluation of SRAM faulty behavior under bit line coupling

3rd International Design and Test Workshop (IDT 2008)

Author(s): Z. Al-Ars ; S. Hamdioui
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 December 2008
Conference Location: Monastir, Tunisia
Conference Date: 20 December 2008
Page(s): 231 - 235
ISBN (CD): 978-1-4244-3478-7
ISBN (Paper): 978-1-4244-3479-4
DOI: 10.1109/IDT.2008.4802503
Regular:

The faulty behavior of memory devices has traditionally been evaluated in isolation of the parasitic effects present on chip. As these effects become more dominant, however, they start to... View More

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