IEEE - Institute of Electrical and Electronics Engineers, Inc. - Degradation Mechanisms in SiC Bipolar Junction Transistors

2008 66th Annual Device Research Conference (DRC)

Author(s): Qingchun Zhang ; C. Jonas ; A. Agarwal ; P. Muzykov ; T. Sudarshan ; B. Geil ; C. Scozzie
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 June 2008
Conference Location: Santa Barbara, CA, USA
Conference Date: 23 June 2008
Page(s): 285 - 286
ISBN (CD): 978-1-4244-1943-2
ISBN (Paper): 978-1-4244-1942-5
ISSN (Paper): 1548-3770
DOI: 10.1109/DRC.2008.4800841
Regular:

SiC power bipolar junction transistors (BJTs) are believed to have the potential of operating reliably at much higher junction temperatures as compared to SiC MOSFETs. The obstacle for... View More

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